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cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 1/9 MTBA5N10Q8 cystek product specification n -channel logic level enha ncement mode power mosfet MTBA5N10Q8 bv dss 100v i d 3a v gs =10v, i d =3a 123m r dson(typ) v gs =4.5v, i d =2a 130m description the MTBA5N10Q8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications. features ? low gate charge ? simple drive requirement ? pb-free lead plating package symbol outline sop-8 MTBA5N10Q8 pin 1 g gate d drain s source
cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 2/9 MTBA5N10Q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 100 gate-source voltage v gs 20 v continuous drain current @v gs =10v, t a =25 c 3.5 continuous drain current @v gs =10v, t a =70 c i d 2.8 pulsed drain current i dm 14 *1 avalanche current i as 20 a avalanche energy @ l=2mh, i d =3a, v gs =10v, v dd =25v e as 9 mj t a =25 2.5 total power dissipation *3 t a =70 p d 1.6 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 4 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. 3. surface mounted on 1 in 2 copper pad of fr-4 board, t 10s ; 125 c/w when mounted on minimum copper pad. the value in any given application depends on the user?s specific board design. characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v gs =0, i d =250 a v gs(th) 1.0 1.5 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0 - - 1 v ds =80v, v gs =0 i dss - - 25 a v ds =80v, v gs =0, t j =85 c - 123 145 v gs =10v, i d =3a r ds(on) *1 - 127 155 m v gs =4.5v, i d =2a g fs *1 - 6 - s v ds =5v, i d =3a dynamic qg *1, 2 - 19 - qgs *1, 2 - 5 - qgd *1, 2 - 3.7 - nc i d =3a, v ds =50v, v gs =10v t d(on) *1, 2 - 13 - tr *1, 2 - 15 - t d(off) *1, 2 - 52 - t f *1, 2 - 8 - ns v ds =50v, i d =1a, v gs =10v, r g =6 cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 3/9 MTBA5N10Q8 cystek product specification ciss - 1265 - coss - 28 - crss - 18 - pf v gs =0v, v ds =30v, f=1mhz source-drain diode i s *1 - - 3 i sm *3 - - 12 a v sd *1 - 0.8 1 v i s =3a, v gs =0v trr - 40 - ns qrr - 75 - nc i f =3a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. ordering information device package shipping MTBA5N10Q8-0-t3-g sop-8 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 4/9 MTBA5N10Q8 cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 14 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v, 9v, 8v, 7v, 6v, 5v, v gs =3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =2.5v v gs =3v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 100 150 200 250 300 350 400 450 500 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =3a r ds( on) @tj=25c : 123m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =3a cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 5/9 MTBA5N10Q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalizedthreshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =50v i d =3a maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 1s r ds( on) limit t a =25c, tj=150c, v gs =10v r ja =50c/w, single pulse maximum drain current vs junction temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =50c/w cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 6/9 MTBA5N10Q8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 2 4 6 8 10 12 14 0123456 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse maximum power dissipation 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) peak transient power (w) t j(max) =150c t a =25c ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 7/9 MTBA5N10Q8 cystek product specification reel dimension carrier tape dimension cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 8/9 MTBA5N10Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface. cystech electronics corp. spec. no. : c731q8 issued date : 2013.07.19 revised date : page no. : 9/9 MTBA5N10Q8 cystek product specification sop-8 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1850 0.2007 4.70 5.10 g 0.0531 0.0689 1.35 1.75 b 0.1496 0.1575 3.80 4.00 h 0.1889 0.2007 4.80 5.10 c 0.2283 0.2441 5.80 6.20 i 0.0019 0.0098 0.05 0.25 d 0.0500* 1.27 * j 0.0157 0.0500 0.40 1.27 e 0.0130 0.0201 0.33 0.51 k 0.0067 0.0098 0.17 0.25 f 0.1472 0.1527 3.74 3.88 l 0.0531 0.0610 1.35 1.55 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead sop-8 plastic package cystek packa g e code: q8 date code ba5 n10 device name |
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